Multi-layer gate dielectric

ABSTRACT

A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first dielectric constant.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 12/615,938 filed Nov. 10, 2009, entitled “A MULTI-LAYER GATEDIELECTRIC”, which is a continuation of U.S. patent application Ser. No.09/109,261 filed Jun. 30, 1998 now abandoned, entitled “A MULTI-LAYERGATE DIELECTRIC”

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to integrated circuit devices and moreparticularly to enhancing dielectric material in those device.

2. Description of Related Art

One way to improve integrated circuit performance is through scaling theindividual devices that comprise the integrated circuit. Thus, eachsubsequent generation of integrated circuit generally involves reducingthe size of the individual devices on, for example, a semiconductorchip. The Morse rule is a common benchmark in the integrated circuittechnology and provides that devices will be scaled down or reduced insize by one-third for each new generation.

The scale of a transistor device requires consideration of the desiredperformance of the device. For example, one goal may be to increase thecurrent flow in the semiconductor material of the transistor. Thecurrent flow is proportional to the voltage applied to the gateelectrode and the capacitance seen at the gate:Q∝C(V−V_(th))where Q is one measure of the current flow, C is capacitance, V is thevoltage applied to the gate electrode, and V_(th) is the thresholdvoltage of the device.

To increase the voltage applied to a device requires an increase inpower, P (P∝V²). However, at the same time as increasing the charge inthe transistor, subsequent generations also seek to reduce the powerrequired to run the device, since, importantly, a reduction of powerreduces the heat generated by the device. Thus, to increase the currentflow through the device without increasing the power requires anincrease in the capacitance in the gate.

One way to increase the capacitance is by adjusting the thickness of thegate dielectric. In general, the capacitance is related to the gatedielectric by the following formula:C=k _(ox) /t _(electrical)where k_(ox) is the dielectric constant of silicon dioxide (SiO₂) andt_(electrical) is the electrical thickness of the gate dielectric. Theelectrical thickness of the gate dielectric is greater than the actualthickness of the dielectric in most semiconductor devices. In general,as carriers flow through the channel of a semiconductor-based transistordevice there is a quantum effect experienced in the channel which causesan area directly below the gate to become insulative. The insulativeregion acts like an extension of the gate dielectric by essentiallyextending the dielectric into a portion of the channel. The second causeof increase gate dielectric thickness attributable to t_(electrical) isexperienced by a similar phenomenon happening in the gate electrodeitself. At inversion, a gate electrode of polysilicon, for example, willgenerally experience a depletion of carriers in the area of thepolysilicon near the gate dielectric. Accordingly, the gate dielectricappears to extend into the polysilicon gate electrode.

The result of the quantum effect in the channel and a depletion in thepolysilicon gate electrode is an electrical thickness (t_(electrical))of the gate dielectric greater than the actual thickness of the gatedielectric. The magnitude of the channel quantum effect and polysilicondepletion may be estimated or determined for a given technology.Accordingly, the electrical thickness (t_(electrical)) for a SiO₂ may becalculated and scaled for a given technology.

In considering the capacitance effects of the gate dielectric, aconsideration of the thickness of gate dielectric is important for otherreasons. First, the gate dielectric cannot be too thin as a thin gatedielectric will allow a leakage current from the channel through thegate electrode. At the same time, the gate dielectric cannot be toothick because such a gate structure may produce an undesirable fringeelectric field. The desired electric field at the gate is typicallyperpendicular to the surface of the semiconductor substrate. Beyond acertain gate dielectric thickness, generally thought to be beyondone-third the lateral width of the gate electrode for a SiO₂ gatedielectric, the electrical field deviates from a perpendicular courseand sprays about the gate electrode leading to an undesirable fringeelectric field.

What is needed is a way to increase the capacitance of a gate dielectricwithout decreasing the performance of the device. It is preferable ifthe increased capacitance is consistent with scaling techniques and maybe used in multiple generation technologies.

SUMMARY OF THE INVENTION

A transistor gate dielectric is disclosed. The transistor gatedielectric includes a first dielectric material having a firstdielectric constant and a second dielectric material having a seconddielectric constant different from the first dielectric constant.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of a side view of a transistordielectric having a gate dielectric of a first dielectric material and asecond dielectric material.

DETAILED DESCRIPTION OF THE INVENTION

The invention relates to a transistor gate dielectric made up of atleast two different dielectric materials. For example, one embodimentcontemplates a gate dielectric made up of two different dielectricmaterials each with its own dielectric constant. The dielectric materialnearest the substrate, e.g., a semiconductor substrate will have amodest dielectric constant that produces a defect-free interface withthe substrate and is stable against oxide formation. The seconddielectric material will have a relatively high dielectric constant andbe stable in contact with the desired gate material. By varying thethickness of the material, a gate dielectric can be formed that isscalable for different technology generations, has a low leakagecurrent, and maintains an electric field of the gate perpendicular tothe surface of the semiconductor. A transistor gate utilizing themulti-layer gate dielectric is also disclosed.

FIG. 1 illustrates an embodiment of the multi-layer gate dielectric ofthe invention. FIG. 1 shows transistor 100 consisting of gate electrode110 overlying gate dielectric 140. Gate electrode 110 and gatedielectric 140 overlie semiconductor substrate 105 such as, for example,a silicon semiconductor substrate. Formed in substrate 105 adjacenttransistor gate electrode 110 are diffusion or junction regions 160. Thetransistor is isolated from other devices, in this example, by shallowtrench isolation structures 150.

Gate dielectric 140 is made up of, in this example, a bi-layer gatedielectric stack. The gate dielectric material is deposited byconventional techniques such as chemical vapor deposition or otherdeposition techniques according to the specifics of the material. Theindividual dielectric materials that make up the gate dielectric stackare patterned using conventional techniques such as masking and etching.

In one embodiment, the bottom dielectric layer 130 is selected to have amodest dielectric constant, k₁, that forms a generally defect-freeinterface with substrate 105. A generally defect-free interface is onethat has a sufficiently high (e.g., >8 MV/cm) dielectric breakdownstrength implying that the dielectric layer is pin-hole free andcontains a negligible number of defects that would lead to breakdown ofthe dielectric layer at lower electric fields. Bottom dielectric layer130 should also be stable on silicon and stable against oxide formation.In one embodiment, bottom dielectric layer 130 materials are chosen thathave a heat of formation greater than the heat of formation of SiO₂. Thechemistry in terms of stability of bottom layer 130 is important toachieve the low defect interface. Examples of suitable bottom dielectriclayer 130 include, but are not limited to, hafnium oxide (HfO₂),zirconium oxide (ZrO₂), barium oxide (BaO), lanthanum oxide (La₂O3), andyttrium oxide (Y₂O₃).

In this embodiment, top dielectric layer 120 is selected to have arelatively high dielectric constant, k₂, and is a material that isstable in contact with gate electrode 110. Examples of suitable topdielectric layers are BaSrTiO₃ (BST) and PbZrTiO₃ (PZT). One function oftop dielectric layer 120 is to block any leakage current through bottomdielectric layer 130, without adding to the equivalent thickness of gatedielectric 140 (i.e., equivalent thickness of an SiO₂ gate dielectric)and contributing to the production of a fringe electric field.

One guideline to select the appropriate dielectric layer thickness t₁for bottom dielectric layer 130, and t₂ for top dielectric layer 120, isthe following. For a given technology generation (i.e., a given gatelength of gate electrode 110 and equivalent oxide thickness of a SiO₂gate dielectric, t_(ox)), a total thickness, t, of gate dielectric 140should be less than one-third of the gate length of gate electrode 110.The effective dielectric constant, k, may then be determined by thefollowing relationship:k=k _(ox)(t/t _(ox))  (1)wherein k_(ox) is the dielectric constant of SiO₂ which is typicallyrepresented as 4.0.

Combining the above relationship with a relationship for calculating theeffective dielectric constant of gate dielectric 140 of the following:k=t/(t ₁ /k ₁ +t ₂ /k ₂),  (2)the total thickness of dielectric layer 140 may be calculated:t=t ₁ +t ₂.  (3)Combining equations (1), (2), and (3) yields the following:t ₁ /k ₁ +t ₂ /k ₂ =t _(ox) /k _(ox).  (4)Equation (4) is then solved for a thickness of bottom dielectric layer130 having a known dielectric constant, k₁, and top dielectric layer 120also having a known dielectric constant, k₂. Table I shows theindividual thicknesses of first dielectric layer 130 (t₁) and seconddielectric layer 120 (t₂) for various technologies scaled by the Morserule starting with a gate electrode length of 150 nanometers, for a k₁of 30 and a k₂ of 300.

Table I demonstrates that a multi-layer dielectric gate stack, in thiscase, a bi-layer dielectric gate stack, is scalable for a giventechnology. For example, for each technology, given a first dielectriclayer 130 having a dielectric constant k₁ of 30 and a second dielectriclayer 120 having a dielectric constant k₂ of 300, a total gatedielectric layer thickness less than one-third of the individual gatelengths is maintained. Further, the choice of second gate dielectriclayer 120 of material to block the leakage current maintains theperformance of the device. Finally, by manipulating the gate dielectricmaterials, the capacitance of the device may be appropriately increasedfor the given technology.

For a gate electrode 110 that is polysilicon, a third dielectric layermay be utilized to act as a barrier layer to prevent interaction betweentop dielectric layer 120 materials having high dielectric constants andthe polysilicon gate material. Suitable third dielectric materialsinclude, but are not limited to, HfO₂, ZrO₂, BaO, La₂O₃, and Y₂O₃(notably the same materials suitable as bottom dielectric layer 130).

The above example is described with respect to gate electrode 110 beinga polysilicon. It is to be appreciated that the same principles may beapplied to gate electrodes of different materials, such as, for example,metal gates. In the case of a metal gate electrode, the electricalthickness (t_(electrical)) may be reduced since, in general, metal gateelectrodes do not experience the depletion seen by polysilicon. Table Ialso shows the scaling of the bi-layer dielectric materials discussedabove using metal gate technology.

TABLE I Technology Generation 1 2 3 4 5 6 Lgate (nm) 150 100 70 50 35 25t_electrical (Å) 30 21 15 10 7 5 t_ox (Å): metal gate 26 17 11 6 3 1 t(Å): total stack thick 300 210 147 103 72 50 t₁ (Å), k₁ = 30 183 118 7539 17 3 t₂ (Å), k₂ = 300 117 92 72 64 55 48

In the preceding detailed description, the invention is described withreference to specific embodiments thereof. It will, however, be evidentthat various modifications and changes may be made thereto withoutdeparting from the broader spirit and scope of the invention as setforth in the claims. The specification and drawings are, accordingly, tobe regarded in an illustrative rather than a restrictive sense.

What is claimed:
 1. A transistor gate stack comprising: a siliconsubstrate; a first material comprising hafnium and oxygen formeddirectly on the silicon substrate, the first material having a firstdielectric constant; a second material comprising strontium, titanium,and oxygen formed directly on the first material, the second materialhaving a second dielectric constant greater than the first dielectricconstant; and a metal gate electrode formed over the second material. 2.The transistor gate stack of claim 1, wherein the first material has afirst thickness and the second material has a second thickness, thecombination of the first thickness and the second thickness defining atotal thickness less than one-third of a length of the metal gate. 3.The transistor gate stack of claim 2, wherein the first materialthickness and the second material thickness are determined by therelationshipt₁/k₁+t₂/k₂=t_(ox)/k_(ox) wherein t₁ is the first material thickness, t₂is the second material thickness, t_(ox) is the minimum thickness for agate dielectric of silicon dioxide for a chosen gate length, k₁ is thedielectric constant for the first material, k₂ is the dielectricconstant for the second material, and k_(ox) is the dielectric constantof silicon dioxide.
 4. The transistor gate stack of claim 1, wherein thefirst material is HfO₂
 5. The transistor gate stack of claim 1, whereinthe second material is BaSrTiO₃.
 6. A transistor gate stack comprising:a semiconductor substrate; a first dielectric material comprisingsilicon nitride formed directly on the semiconductor substrate andhaving a first dielectric constant; a second dielectric materialcomprising a metal oxide formed directly on the first dielectricmaterial and having a second dielectric constant greater than the firstdielectric constant and wherein the second dielectric material has athickness less than 117 Å; and a metal gate electrode formed over thesecond dielectric material.
 7. The transistor gate stack of claim 6,wherein the first dielectric material has a first thickness and thesecond dielectric material has a second thickness, the combination ofthe first thickness and the second thickness defining a total thicknessless than one-third of a length of the metal gate.
 8. The transistorgate stack of claim 7, wherein the first dielectric material thicknessand the second dielectric material thickness are determined by therelationshipt₁/k₁+t₂/k₂=t_(ox)/k_(ox) wherein t₁ is the first dielectric materialthickness, t₂ is the second dielectric material thickness, t_(ox) is theminimum thickness for a gate dielectric of silicon dioxide for a chosengate length, k₁ is the dielectric constant for the first dielectricmaterial, k₂ is the dielectric constant for the second dielectricmaterial, and k_(ox) is the dielectric constant of silicon dioxide. 9.The transistor gate stack of claim 6, wherein the second material isPbZrTiO₃ or BaSrTiO₃.
 10. A transistor gate stack comprising: asemiconductor substrate; a first layer comprising hafnium and oxygenformed directly on the semiconductor substrate, the first layer having afirst dielectric constant; a second layer comprising zirconium andoxygen, the second layer having a second dielectric constant greaterthan the first dielectric constant; a third layer comprising hafnium andoxygen-formed directly on the second layer, the third layer having athird dielectric constant that is the same as the first dielectricconstant; and a gate electrode formed over the third layer.
 11. Thetransistor gate stack of claim 10, wherein the first layer is HfO₂. 12.The transistor gate stack of claim 10, wherein the third layer is HfO₂.13. The transistor gate stack of claim 10, wherein the second layer isPbZrTiO₃.